IndiumV3, Main, Repository, bibRecord, 000B10

In0.53Ga0.47As/GaAs0.5Sb0.5 Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics

Identifieur interne : 000B10 ( Main/Repository ); précédent : 000B09; suivant : 000B11

In0.53Ga0.47As/GaAs0.5Sb0.5 Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics

Auteurs : RBID : Pascal:14-0034038

Descripteurs français

Pascal (Inist)
- Transistor effet champ, Circuit accordable, Hétérostructure, Accommodation réseau, Effet tunnel, Densité courant, Conductivité différentielle négative, Circuit intégré hybride, Hétérojonction, Puits quantique, Couche ultramince, Phosphure d'indium, Composé binaire, Oxyde d'hafnium, Diélectrique permittivité élevée, 8107S, InP, HfO2, Diode inversée.

English descriptors

KwdEn :
- Backward diode, Binary compound, Current density, Field effect transistor, Hafnium oxide, Heterojunction, Heterostructures, High k dielectric, Hybrid integrated circuit, Indium phosphide, Mismatch lattice, Negative differential conductivity, Quantum well, Tunable circuit, Tunnel effect, Ultrathin films.

Abstract

Vertical quantum-well (QW) tunnel-FETs are fabricated based on an ultrathin In_0.53Ga_0.47As/GaAs_0.5Sb_0.5 staggered gap (type-II) heterostructure lattice matched to InP. Area-dependent QW-to-QW tunneling current is demonstrated. Devices with HfO₂ high-k gate dielectric (EOT ∼ 1.3 nm) exhibit minimum subthreshold swings of 140 mV/decade at 300 K, with an ON-current density of 0.5 μAJ/μm² at V_DD = 0.5 V. Sharp negative differential resistance is observed in the output characteristics. For the first time, gate-tunable backward diode characteristics are demonstrated in this material system, with peak curvature coefficient of 30 V^-1 near V_DS = 0 V. These results show the potential of vertical TFETs in hybrid IC applications.

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to stream Main, to step Corpus: 000221

Links to Exploration step

Pascal:14-0034038

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">In<sub>0.53</sub>
Ga<sub>0.47</sub>
As/GaAs<sub>0.5</sub>
Sb<sub>0.5</sub>
 Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics</title>
<author><name>TAO YU</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microsystems Technology Laboratories, Massachusetts Institute of Technology</s1>
<s2>Cambridge, MA 02139</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
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<country>États-Unis</country>
<placeName><settlement type="city">Cambridge (Massachusetts)</settlement>
<region type="state">Massachusetts</region>
</placeName>
<orgName type="university">Massachusetts Institute of Technology</orgName>
</affiliation>
</author>
<author><name sortKey="Teherani, James T" uniqKey="Teherani J">James T. Teherani</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microsystems Technology Laboratories, Massachusetts Institute of Technology</s1>
<s2>Cambridge, MA 02139</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
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<orgName type="university">Massachusetts Institute of Technology</orgName>
</affiliation>
</author>
<author><name sortKey="Antoniadis, Dimitri A" uniqKey="Antoniadis D">Dimitri A. Antoniadis</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microsystems Technology Laboratories, Massachusetts Institute of Technology</s1>
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<orgName type="university">Massachusetts Institute of Technology</orgName>
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</author>
<author><name sortKey="Hoyt, Judy L" uniqKey="Hoyt J">Judy L. Hoyt</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microsystems Technology Laboratories, Massachusetts Institute of Technology</s1>
<s2>Cambridge, MA 02139</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>États-Unis</country>
<placeName><settlement type="city">Cambridge (Massachusetts)</settlement>
<region type="state">Massachusetts</region>
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<seriesStmt><idno type="ISSN">0741-3106</idno>
<title level="j" type="abbreviated">IEEE electron device lett.</title>
<title level="j" type="main">IEEE electron device letters</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Backward diode</term>
<term>Binary compound</term>
<term>Current density</term>
<term>Field effect transistor</term>
<term>Hafnium oxide</term>
<term>Heterojunction</term>
<term>Heterostructures</term>
<term>High k dielectric</term>
<term>Hybrid integrated circuit</term>
<term>Indium phosphide</term>
<term>Mismatch lattice</term>
<term>Negative differential conductivity</term>
<term>Quantum well</term>
<term>Tunable circuit</term>
<term>Tunnel effect</term>
<term>Ultrathin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Transistor effet champ</term>
<term>Circuit accordable</term>
<term>Hétérostructure</term>
<term>Accommodation réseau</term>
<term>Effet tunnel</term>
<term>Densité courant</term>
<term>Conductivité différentielle négative</term>
<term>Circuit intégré hybride</term>
<term>Hétérojonction</term>
<term>Puits quantique</term>
<term>Couche ultramince</term>
<term>Phosphure d'indium</term>
<term>Composé binaire</term>
<term>Oxyde d'hafnium</term>
<term>Diélectrique permittivité élevée</term>
<term>8107S</term>
<term>InP</term>
<term>HfO2</term>
<term>Diode inversée</term>
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<front><div type="abstract" xml:lang="en">Vertical quantum-well (QW) tunnel-FETs are fabricated based on an ultrathin In<sub>0.53</sub>
Ga<sub>0.47</sub>
As/GaAs<sub>0.5</sub>
Sb<sub>0.5</sub>
 staggered gap (type-II) heterostructure lattice matched to InP. Area-dependent QW-to-QW tunneling current is demonstrated. Devices with HfO<sub>2</sub>
 high-k gate dielectric (EOT ∼ 1.3 nm) exhibit minimum subthreshold swings of 140 mV/decade at 300 K, with an ON-current density of 0.5 μAJ/μm<sup>2</sup>
 at V<sub>DD</sub>
 = 0.5 V. Sharp negative differential resistance is observed in the output characteristics. For the first time, gate-tunable backward diode characteristics are demonstrated in this material system, with peak curvature coefficient of 30 V<sup>-1</sup>
 near V<sub>DS</sub>
 = 0 V. These results show the potential of vertical TFETs in hybrid IC applications.</div>
</front>
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Ga<sub>0.47</sub>
As/GaAs<sub>0.5</sub>
Sb<sub>0.5</sub>
 Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics</s1>
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<fA11 i1="01" i2="1"><s1>TAO YU</s1>
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<fA14 i1="01"><s1>Microsystems Technology Laboratories, Massachusetts Institute of Technology</s1>
<s2>Cambridge, MA 02139</s2>
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<fC01 i1="01" l="ENG"><s0>Vertical quantum-well (QW) tunnel-FETs are fabricated based on an ultrathin In<sub>0.53</sub>
Ga<sub>0.47</sub>
As/GaAs<sub>0.5</sub>
Sb<sub>0.5</sub>
 staggered gap (type-II) heterostructure lattice matched to InP. Area-dependent QW-to-QW tunneling current is demonstrated. Devices with HfO<sub>2</sub>
 high-k gate dielectric (EOT ∼ 1.3 nm) exhibit minimum subthreshold swings of 140 mV/decade at 300 K, with an ON-current density of 0.5 μAJ/μm<sup>2</sup>
 at V<sub>DD</sub>
 = 0.5 V. Sharp negative differential resistance is observed in the output characteristics. For the first time, gate-tunable backward diode characteristics are demonstrated in this material system, with peak curvature coefficient of 30 V<sup>-1</sup>
 near V<sub>DS</sub>
 = 0 V. These results show the potential of vertical TFETs in hybrid IC applications.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F02</s0>
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<fC02 i1="03" i2="X"><s0>001D03F06A</s0>
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<fC02 i1="04" i2="3"><s0>001B80A07S</s0>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>08</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>24</s5>
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<s5>24</s5>
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<s5>24</s5>
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<s5>25</s5>
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<s5>25</s5>
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<s5>25</s5>
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<s5>26</s5>
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<s5>26</s5>
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<s5>27</s5>
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<s5>27</s5>
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<s4>INC</s4>
<s5>56</s5>
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<s4>INC</s4>
<s5>82</s5>
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<s4>INC</s4>
<s5>83</s5>
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<s4>CD</s4>
<s5>96</s5>
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<s4>CD</s4>
<s5>96</s5>
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<s4>CD</s4>
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<s5>10</s5>
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<s5>10</s5>
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<s5>10</s5>
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</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
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In0.53Ga0.47As/GaAs0.5Sb0.5 Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics

In0.53Ga0.47As/GaAs0.5Sb0.5 Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri